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Preliminary
02.05.21
Features * 1.5k high transimpedance * 28 dB gain * Low noise (typ.8.2 pA/Hz@100 MHz) * Typical 2400 MHz O/E bandwidth * Over 25 dB wide dynamic range * 3.3 V or 5.0 V single voltage supply operation * Differential output
F0100505B
3.3 V /5V 2.5 Gb/s NRZ Receiver
Transimpedance Amplifier
Applications * Preamplifier of an optical receiver circuit for OC-48/STM-16 (2.7 Gb/s (FEC available))
Functional Description The F0100505B is stable GaAs integrated transimpedance amplifier. Typical Applications are for 2.7 Gb/s (FEC avaiable) optical receiver circuit, for example, OC-48/STM-16, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100505B typically specifies a high transimpedance of 1.5 k (RL=50 ) at a typical 2400 MHz O/E bandwidth (-3 dB-cutoff frequency) with a dynamic range of over 25 dB. It also provides a large optical input overload of more than +1 dBm. Furthermore, it can operate with a low supply voltage of single +3.3 V. It features a typical dissipation current of 45 mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier cannot operate with the maximum performance owing to parasitic element of the package.
3.3 V / 5V 2.5Gb/s Transimpedance Amplifier
Absolute Maximum Ratings
F0100505B
All published data at Ta=25 C unless otherwise indicated. This device isn't guaranteed opto-electric characteristics in these ranges. At least, this device isn't broken in these ranges. VSS=0 V
Parameter Supply Voltage Supply Voltage Input Current Ambient Operating Temperature Storage Temperature Symbol VDD3.3 IDD5.0 Iinpeak Ta Tstg Value -0.3 to +4.0 V -0.3 to +7.0 V 4 -40 to +90 -50 to 125 Units V mA mA C C Attentions at 3.3 V operation at 5.0 V operation -
Recommended Operating Conditions VSS=0 V, unless specified
Parameter Supply Voltage Supply Voltage Ambient Operating Temperature Input Capacitance Symbol Min. VDD3.3 IDD5.0 Ta Cpd 3.10 4.75 0 Value Typ. 3.30 5.00 25 0.25 Max. 3.60 5.25 85 V V C pF at Vb=-2 V* at 3.3 V operation at 5.0 V operation Units Attentions
* Vb is the bias between IN and VPD. Show [Test Circuits / 2 ] Block Diagram of F0832483T]
3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier
Electrical Characteristics
F0100505B
Ta=25 C, VDD3.3=3.3 V, VSS=0, unless specified
Value
Parameter Supply Current Input Voltage Output Voltage(positive) Output Voltage(negative) Gain(positive) Gain(negative) -3dB High Frequency Cut-off (positive) -3dB High Frequency Cut-off (negative) Input Impedance Output Impedance(positive) Output Impedance(negative) Transimpedance(positive) Transimpedance(negative) AGC time constant
Symbol
Test Conditions Min. Typ. 50 0.96 2.13 2.04 27.6 27.4 1130 1010 67 59 55 1.5 1.5 10 Max. -
Units -
IDD Vi Vop Von S21p S21n Fcp Fcn Ri Rout Rout Ztp Ztn tagc
DC *1 *1 *1 Single-ended, f=1 MHz *1 Single-ended, f=1 MHz *1 S21p-3dB S21p-3dB f=1 MHz, *1 f=1 MHz, *1 f=1 MHz, *1 RL=-50 , Single-ended, *2 RL=-50 , Single-ended, *2 Cout=470 pF
mA V V V dB dB MHz MHz k k sec
* 1 Test circuit is shown [Test Circuits / 1] AC Characteristics]. * 2 Zt(p,n)=10^(S21(p,n)/20x(Ri+50)/2
Optical and Electrical Characteristics This table values are specified by F0832671T. F0832671T is 2.7 Gb/s (FEC available) NRZ PIN-PD preamplifier module using F0100505B. Test circuits of F0832671T are shown in [Test Circuits]. Ta=25 C, VDD3.3=3.3 V, VSS=0 V, unless specified
Parameter Transimpedance O/E High Cut-off Frequency O/E Low Cut-off Frequency Equivalent Input Noise Sensitivity Overload Output Impedance Symbol Ztm Fcoeh Fcoel Inoise Pin-min Pin-max Routm Test Conditions RL=50 , Single-ended f=100 MHz,*3 Ztm-3dB,*3 Cout=470pF f=100 MHz 2.66606 Gb/s, PRBS2^23-1, BER=1E-10,*4 No input, f=1 MHz, *3 Min. +2 Value Typ. 1.4 2400 17 8.2 -23 TBD Max. Units k MHz kHz pA/Hz dBm dBm
* 3 Shown [Test Circuits/3] Optical & Electrical Characteristics]. * 4 Shown [Test Circuits/4] Sensitivity Characteristics].
3.3 V / 5V 2.5Gb/s Transimpedance Amplifier
Block Diagram
F0100505B
VDD3.3
VDD5.0
OUT IN OUTB
CAP Rf AGC
Cout VSS
Symbol VDD3.3 VDD5.0 VSS IN OUT OUTB CAP
Description Supply Voltage for 3.3 V operation, it is not required for 5.0 V operation. Supply Voltage for 5.0 V operation, For 3.3 V operation, VDD3.0 must be opened. Supply Voltage Generally VSS is connected to GND. Input Non-inverted data output, must be AC coupled. Inverted data output, must be AC coupled. Connected to outer capacitance
3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier
Die Pad Assignments
F0100505B
A 12 13 14 11 10 9 8 7 6 5 1 2 O 820m 3 4 820m
No. 1 2 3 4 5 6 7 8 9
Symbol VDD3.3 VDD5.0 OUTB VSS OUTB VSS OUT VSS OUT
Center Coordinates (m) (75,140) (395,75) (555,75) (715,75) (715,235) (715,395) (715,555) (715,715) (555,715)
No. 10 11 12 13 14
Symbol VSS VDD3.3 CAP VSS IN
Center Coordinates (m) (395,715) (235,715) (75,715) (75,555) (75,395)
O A
(0,0) (790,790)
3.3 V / 5V 2.5Gb/s Transimpedance Amplifier
Test Circuits 1) AC Characteristics
F0100505B
50 Pin=-50dBm f=300kHz to 3GHz
Network Analyzer
50
VDD IN OUT F0100505B OUTB VSS Prober 0.22F 50 Switch
2) Block Diagram of F0832483T
VPD VDD R=3 k C1=200 pF Diode R C2 C3 C2=100 pF C3=2200 pF Cout=470 pF PD VDD3.3 C1 IN F0100505B CAP COUT OUTB OUT CPD=0.25 pF (typical value)
VSS
3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier
3) Optical & Electrical Characteristics
F0100505B
3.3V VPD Optical Attenuator
0.022F
F0832671T
VDD
0.022F
3.3V
Optical Component Analyzer* *Agilent 8702 Systems
50
4) Sensitivity Characteristics
3.3V VPD E/O Converter Optical Attenuator
0.022F
F0832671T
VDD
0.022F
3.3V
Pulse Pattern Generator
CLK
0.022F
Comparator SEI F0321818M OUT OUTB
50
Bit Error Rate Tester
3.3 V / 5V 2.5Gb/s Transimpedance Amplifier
Examples of AC Characteristics
F0100505B
1) Gain (S21p) Ta=25 C, VDD=3.30 V, VSS=0 V, Pin=-50 dBm, RL=50 , 300 kHz to 3 GHz
35 30 25
Gain(dB)
20 15 10 5 0 0.1 1 10 100 1000 10000 Frequency(MHz)
2) Gain (S21n) Ta=25 C, VDD=3.30 V, VSS=0 V, Pin=-50 dBm, RL=50 , 300 kHz to 3 GHz
35 30 25
Gain(dB)
20 15 10 5 0 0.1 1 10 100 1000 10000 Frequency(MHz)
3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier
Examples of Optical & Electrical Characteristics 1) Frequency response of Transimpedance (Ta=25 C)
F0100505B
80
Transimpedance(dB)
70 60 50 40 30 20 10 0 0.1 1 10 100 1000 10000 Frequency (MHz) 3.6V 3.3V 3.1V
2) Typical Bit Error Rate Date rate : 2.666,6Gb/s, PRBS2^23-1, Ta=25C, VDD=3.3V, VSS=0V, RL=50
10-3
10-4
10-5
Bit Error Rate
10-6 10-7 10-8 10-9 10-10 10-11 10-12 -29
-27
-25
-23 (dBm )
-21
O p tical In p ut Power
3.3 V / 5V 2.5Gb/s Transimpedance Amplifier
F0100505B
3) Eye Diagram (Ta=25 C, VDD=3.3 V, RL=50 road single-end) Average input Optical Power -20 dBm (=1310nm, 2.66606 Gb/s, NRZ, PRBS2^23-1)
5 mV/div
100 ps/div
Average input Optical Power +2 dBm (=1310nm, 2.66606 Gb/s, NRZ, PRBS2^23-1)
100 mV/div
100 ps/div
3.3 V / 5V 2.5 Gb/s Transimpedance Amplifier
General Description
F0100505B
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, "typical", "minimum", or "maximum" parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. Recommendation SEI basically recommends the F08 series PINAMP modules for customers of the transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the F01 series transimpedance amplifiers. SEI's F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. Noise Performance The F0100505B based on GaAs FET's shows excellent low-noise characteristics compared with IC's based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; the F0100505B is the best choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available.
3.3 V / 5V 2.5Gb/s Transimpedance Amplifier
Die-Chip Description
F0100505B
The F0100505B is shipped like the die-chip described above. The die thickness is typically 280 m 20 m with the available pad size uncovered by a passivation film of 95 m square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 C gave satisfactory results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the temperature of 150 C by a ball-bonding machine is effective. Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI's authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7. Precautions Owing to their small dimensions, the GaAs FET's from which the F0100505B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.
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